Evolution of wetting layer in InAs/GaAs quantum dot system

AbstractFor InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS).Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra.Taking into account the strain and segregation effects, a model has be

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